The temperature induced current transport characteristics in the orthoferrite YbFeO3-δ thin film/p-type Si structure.

The perovskite ytterbium ferrite is a new ferroelectric semiconductor material. We presented the temperature induced current-voltage (I-V) characteristics of the Al/YbFeO3-δ/p-Si/Al hetero-junction. The orthoferrite YbFeO3-δ thin films were deposited on a single crystal p-type Si substrate by a radio frequency magnetron sputtering system. The potential barrier height (BH) [Formula: see text] and ideality factor n of the heterojunction were obtained by thermionic emission current method based on the recommendations in the literature. The fact that the calculated slopes of I-V curves become temperature independent implying that the field emission current mechanism takes place across the device, which has been explained by the presence of the spatial inhomogeneity of BHs or potential fluctuations. Moreover, a tunneling transmission coefficient value of 26.67 was obtained for the ferroelectric YbFeO3-δ layer at the Al/p-Si interface.

The effect of silicon loss and fabrication tolerance on spectral properties of porous silicon Fabry-Perot cavities in sensing applications.

In this paper, we investigate the effect of non-uniformities (enlargement of current passage, non-equal surface current densities, etc.) in axial as well as transverse directions of a porous silicon Fabry-Perot (FP) cavity as well as loss nature of bulk silicon on spectral properties of this cavity, even that cavity is created with an anisotropic etching process. Without correct and comprehensive characterization of such cavities by incorporating these non-uniformities and inherent lossy nature of a cavity, detection and identification of biological and chemical molecules by that cavity may yield unpredictable and misleading results. From our simulations, we note the following two key points. First, effects of the refractive index and the thickness of microcavity region of a lossless or lossy FP cavity on resonance wavelength is more prevailing than those of first and last layers. Second, the effect of some small loss inside the FP cavity is not detectable by the measurement of resonance wavelength whereas the same influence is noticeable by the measurement of reflectivity. We carried out some measurements from two different regions on the fabricated cavities to validate our simulation results. From a practical point of view in correct detection and/or identification of lossy biological or chemical vapor by FP cavities, we conclude that not only the measurement of resonance wavelength as well as its shift but also the reflectivity value at the resonance wavelength or some specific wavelengths should be utilized.